- 50 - sdbs12 thru sdbs110 1.0 amp. schottky barrier rectifiers voltage range 20 to 100 volts current 1.0 ampere f eatures metal to silicon rectifier, majority carrier conduction low forward voltage drop easy pick and place high surge current capability plastic material used carriers underwriters laboratory classification 94v-o epitaxial construction high temperature soldering: 260 o c/ 10 seconds at terminals small size, single installation lead solderable per mil-std-202 method 208 m echanical data case: molded plastic terminals: solder plated polarity: indicated by cathode band db dbs dimensions in inches and (millimeters) m aximum ratings and elec trical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% sdb 12 sdb 13 sdb 14 sdb 15 sdb 16 sdb 19 sdb 110 type number symbol sdbs 12 sdbs 13 sdbs 14 sdbs 15 sdbs 16 sdbs 19 sdbs 110 unit s maximum recurrent peak reverse voltage v rrm 20 30 40 50 60 90 100 v maximum rms voltage v rms 14 21 28 35 42 63 70 v maximum dc blocking voltage v dc 20 30 40 50 60 90 100 v maximum average forward rectified current at t l (see fig. 1) i (av) 1.0 a peak forward surge cu rrent, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 30 a maximum instantaneous forward voltage (note 1) @ 1.0a v f 0.5 0.75 0.80 v 0.4 0.05 maximum dc reverse current @ t a =25 at rated dc blocking voltage @ t a =100 i r 10 5.0 0.5 ma ma typical junction capacitance (note 3) cj 50 pf typical thermal resistance ( note 2 ) r jl r ja 28 88 /w /w operating temperature range t j -65 to +125 -65 to +150 storage temperature range t stg -65 to +150 notes : 1. pulse test with pw=300 usec, 1% duty cycle 2. measured on p.c.board with 0.5 x 0.5?(12 x 12mm) copper pad areas. 3. measured at 1 mhz and applie d reverse voltage of 4.0v d.c. .404(10.3) .386(9.80) .255(6.5) .245(6.2) .013(0.33) .0088(0.22) .013(0.33) .003(0.076) .060(1.53) .040(1.02) .205(5.2) .195(5.0) .047(1.20) .040(1.02) .335(8.51) .320(8.13) 0 45 .130(3.30) .120(3.05)
-51- ratings and characteristic curves (sdbs12 thru sdbs110) fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 10 100 0 10 20 40 30 50 number of cycles at 60hz at rated tl 8.3ms single half sine wave jedec method fig.1- maximum forward current derating curve average for ward current . (a) 50 60 70 80 90 100 110 120 170 160 150 140 130 0 0.5 1.0 lead temperature. ( c) o resistive or inductive load sdbs15-sdbs110 sdbs12- 14 sdbs pcb mounted on 0.2x0.2" (5.0x5.0mm) copper pad areas fig.3- typical forward characteristics instantaneous for ward current . (a) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 0.01 0.1 1 10.0 50 forward voltage. (v) tj=25 c 0 pulse width=300 s 1% duty cycle fig.4- typical reverse characteristics instantaneous reverse current .(ma) 0 20 40 60 80 100 120 140 0.01 0.1 1 10 100 1000 percent of rated peak reverse voltage. (%) tj=100 c 0 tj=25 c 0 sdbs12-sdbs14 fig.5- typical junction capacitance junction cap acitance.(pf) .1 1.0 10 100 10 100 400 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 sdbs19-sdbs110 sdbs15-sdbs16 sdbs12-sdbs14 sdbs15-sdbs16 sdbs19-sdbs110 sdbs12-sdbs14 sdbs15-sdbs110
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